A Discretization Scheme for an Extended Drift-Diffusion Model Including Trap-Assisted Phenomena

Journal of Computational Physics

Volumn 159, Issue 2, 2000, Pages 197-212

  Bosisio, F ^a   Micheletti, S ^a   Sacco, R ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Mixed finite elements; Newton Krylov methods; Semiconductors

Indexed keywords

DIFFUSION;

A: SEMICONDUCTORS; DEFECT STATE; DISCRETIZATION SCHEME; DRIFT-DIFFUSION MODEL; FINITE-VOLUME; MIXED FINITE ELEMENTS; NEWTON KRYLOV METHOD; NEWTON-KRYLOV; NUMERICAL RESULTS; SCHOTTKY CONTACTS;

FINITE ELEMENT METHOD;

EID: 0008722858     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1006/jcph.2000.6428     Document Type: Article

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