Monolithically integrated Si/SiGe resonant interband tunneling dioded/CMOS MOBILE latch with high voltage swing

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 22-23

  Sudirgo, S ^a   Nandgaonkar, R P ^a   Curanovic, B ^a   Hebding, J ^a   Hirschman, K D ^a   Islam, S S ^a   Rommel, S L ^a   Kurinec, S K ^a   Thompson, P E ^b   Jin, N ^c   Berger, P R ^c  

^a Rochester Institute of Technology   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW POWER ELECTRONICS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

ANALOG TO DIGITAL CONVERTERS; IMPLANTED REGION; INTERBAND TUNNELING; LOGIC APPLICATIONS; MONOLITHICALLY INTEGRATED; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; SELECTIVE GROWTH;

ANALOG TO DIGITAL CONVERSION;

EID: 15844410850     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1271977     Document Type: Conference Paper

References (9)

1. J. P. van der Wagi, A. C Seabaugh, and E. Beam, "RTD/HFET Low Standby Power SRAM Gam Cell, " IEEE Elec. Dev. Lett, vol. 19, pp. 7-9, 1998.
2. H. L Chan, S, Mohan, P. Mazumder, and G. I Haddad, "Compact Multiple-valued Multiplexers Using Negative Differential Resistance Devices, " IEEE/, of Solid-Slate Circuits, vol. 31, pp 1151-1156, 1996.
3. T. Broekaert, B. Brar, J. P. van der Wagt, A. Seabaugh, F. Morris, T. Moise, E. Beam, and G. Frazier, "A Monolithic 4-bit 2-gsps Resonant Tunneling Analog-to-Digital Converter, " IEEE J. Solid-Stale Cite., vol. 33, pp. 1342-1349, 1998.
4. S.L. Rommel, T.E. Dillon, M W. Dashiell, H. Feng, J Kolodzey, P R Berger, P.E Thompson, K.D Hobart, R. Lake, A C Seabaugh, G. Klimecfc, and D.K. Blanks, "Room Temperature Operation of Epitaxially Grown Si/Si 0.5Ge0.5/Si Resonant Interband Tunneling Diodes, " AppL Phys. Lett,, vol. 73, pp. 2191-93, 1998.
5. K Eberl, R. DuschI, O.G. Schmidt, U. Denker, and R. Haug, "Si-Based Resonant Inter- and Intraband Tunneling Diodes, " Journal of Crystal Growth, 227-228, pp. 770-76, 2001.
6. N. Jin, S.Y. Chung, A T Rice, PR. Berger, R. Yu, P.E. Thompson, R. Lake, "151 kA/cm Peak Current Densities in Si/SiGe Resonant Interband Tunneling Diodes for High Power Mixed-Signal Applications, " To appear App. Phys. Lett., Oct. 13, 2003.
7. N Jin, S.Y. Chung, A.T. Rice, P R. Berger, R. Yu, P.E. Thompson, C. Rivas, R Lake, S. Sudirgo, JJ. Kempisty, B. Curanovic, S.L Rommel, K..D. Hirschman, S K Kurinec, P H. Chi, and D S. Simons, "Diffusion Banier Cladding in Si/SiGe Resonant Interband Tunneling Diodes and Their Patterned Growth on PMOS Source/Drain Regions, " IEEE Trans. Elec. Dev., vol. 50, pp. 1876-1884, 2003.
8. U. Auer, W. Prost, M. Agethen, F.-J. Tegude, R, DuschI, and K. Eberl, "Low-Voltage MOBILE Logic Module Based on Si/SiGe Interband Tunnelling Diodes, " IEEE Elec. Dev. Lett., vol. 22, pp. 215-217, 2001.
9. S. Sudirgo, B. Curanovic, S.L Rommel, K.D Hirschman, S.K. Kurinec, N. Jin, A T. Rice, P R. Berger, P.E. Thompson, "Challenges in Integration of Resonant Interband Tunnel Devices with CMOS, " Proceedings of the Fifteenth Biennial University/Government/Industry Microelectronics Symposium, pp. 275-278, 2003.