Oxygen trapping during pulsed laser deposition of oxide films

Applied Surface Science

Volumn 208-209, Issue 1, 2003, Pages 507-511

  Craciun, V ^a   Howard, J M ^a   Craciun, D ^b   Singh, R K ^a  

^a University of Florida   (United States)

^b NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

High k dielectrics; Interfacial layer; Laser ablation; Oxides; Thin films; Trapped oxygen

Indexed keywords

ANNEALING; COMPOSITION; FILM GROWTH; OXYGEN; PULSED LASER DEPOSITION; SILICON; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); SUBSTRATES; ZIRCONIA;

OXIDE FILMS; INTERFACIAL LAYERS;

OXIDES; THIN FILMS;

EID: 0037443247     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01446-0     Document Type: Conference Paper

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