MEMS-tunable vertical-cavity SOAs

IEEE Journal of Quantum Electronics

Volumn 41, Issue 3, 2005, Pages 390-407

  Cole, Garrett D ^a   Björlin, E Staffan ^a   Chen, Qi ^b   Chan, Chung Yeung ^c   Wu, Shaomin ^d   Wang, Chad S ^a   MacDonald, Noel C ^a   Bowers, John E ^a  

^a University of California   (United States)

^b Veeco Metrology   (United States)

^c University of Southern California ^*  (United States)

^d APPLIED OPTOELECTRONICS INC   (United States)

Author keywords

Fabry P rot resonators; Laser amplifiers; Micro electromechanical devices; Optical pumping; Semiconductor optical amplifiers; Surface emitting lasers; Tunable amplifiers; Wafer bonding

Indexed keywords

ELECTROSTATIC ACTUATORS; LASERS; LIGHT REFLECTION; MATHEMATICAL MODELS; MICROELECTROMECHANICAL DEVICES; OPTICAL DESIGN; OPTICAL PUMPING; RESONATORS; SPURIOUS SIGNAL NOISE;

FABRY-PEROT RESONATORS; NOISE FIGURE; SEMICONDUCTOR OPTICAL AMPLIFIERS; SURFACE EMITTING LASERS; TUNABLE AMPLIFIERS; WAFER BONDING;

LIGHT AMPLIFIERS;

EID: 15744382269     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.841496     Document Type: Article

References (41)

1. E. S. Björlin, B. Riou, P. Abraham, J. Piprek, Y.-J. Chiu, K. A. Black, A. Keating, and J. E. Bowers, "Long wavelength vertical-cavity semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 37, no. 2, pp. 274-281, Feb. 2001.
2. R. Lewen, K. Streubel, A. Karlsson, and S. Rapp, "Experimental demonstration of a multifunctional long-wavelength vertical-cavity laser amplifier-detector," IEEE Photon. Technol. Lett., vol. 10, no. 8, pp. 1067-1069, Aug. 1998.
3. N. Bouché, B. Corbett, R. Kuszelewicz, and R. Ray, "Vertical-cavity amplifying photonic switch at 1.5 μm," IEEE Photon. Technol. Lett. vol. 8, no. 8, pp. 1035-1037, Aug. 1996.
4. S. Calvez, A. H. Clark, J. M. Hopkins, R. Macaluso, P. Merlin, H. D. Sun, M. D. Dawson, T. Jouhti, and M. Pessa, "1.3 μm GaInNA's optically-pumped vertical cavity semiconductor optical amplifier," Electron. Lett., vol. 39, no. 1, pp. 100-102, Jan. 2003.
5. E. S. Björlin, J. Geske, and J. E. Bowers, "Optically preamplified receiver at 10 Gb/s using a vertical cavity SOA," Electron. Lett. vol. 37, pp. 1474-1475, Nov. 2001.
6. T. Kimura, E. S. Björlin, J. Piprek, and J. E. Bowers, "High-temperature characteristics and tunability of long-wavelength vertical-cavity semiconductor optical amplifiers," IEEE Photon. Technol. Lett., vol. 15, no. 11, pp. 1501-1503, Nov. 2003.
7. M. Maute, F. Riemenschneider, G. Bohm, H. Halbritter, M. Ortsiefer, R. Shau, P. Meissner, and M.-C. Amann, "Micro-mechanically tunable long wavelength VCSEL with buried tunnel junction," Electron. Lett., vol. 40, pp. 430-431, Apr. 2004.
8. A. Syrbu, V. Iakovlev, G. Suruceanu, A. Caliman, A. Rudra, A. Mircea, A. Mereuta, S. Tadeoni, C.-A. Berseth, M. Achtenhagen, J. Boucart, and E. Kapon, "1.55-μm optically pumped wafer-fused tunable VCSEL's with 32-nm tuning range," IEEE Photon. Technol. Lett., vol. 16, no. 9, pp. 1991-1993, Sep. 2004.
9. Q. Chen, G. D. Cole, E. S. Björlin, T. Kimura, S. Wu, C. S. Wang, N. C. MacDonald, and J. E. Bowers, "First demonstration of a MEMS tunable vertical-cavity SOA," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1438-1440, Jun. 2004.
10. E. S. Björlin, T. Kimura, and J. E. Bowers, "Carrier-confined vertical-cavity semiconductor optical amplifiers for higher gain and efficiency," IEEE J. Select. Topics Quantum Electron., vol. 9, no. 5, pp. 1374-1385, Sep.-Oct. 2003.
11. J. Piprek, E. S. Björlin, and J. E. Bowers, "Design and analysis of vertical-cavity semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 37, no. 1, pp. 127-134, Jan. 2001.
12. C. Tombling, T. Saitoh, and T. Mukai, "Performance predictions for vertical-cavity semiconductor laser amplifiers," IEEE J. Quantum Electron., vol. 30, no. 11, pp. 2491-2499, Nov. 1994.
13. M. S. Wu, E. C. Vail, G. S. Li, W. Yuen, and C. J. Chang-Hasnain, "Tunable micromachined vertical cavity surface emitting laser," Electron. Lett., vol. 31, pp. 1671-1672, Sept. 1995.
14. M. C. Larson, A. R. Massengale, and J. S. Harris Jr., "Continuously tunable micromachined vertical-cavity surface-emitting laser with 18 nm wavelength range," Electron. Lett., vol. 32. pp. 330-332. Feb. 1996.
15. P. Tayebati, P. D. Wang, D. Vakhshoori, C. C. Lu, M. Azimi, and R. N. Sacks, "Half-symmetric cavity tunable microelectromechanical VCSEL with single spatial mode," IEEE Photon. Technol. Lett., vol. 10, no. 12, pp. 1679-1681, Dec. 1998.
16. G. L. Christensen, A. T. T. D. Tran, Z. H. Zhu, Y. H. Lo, M. Hong, J. P. Mannaerts, and R. Bhat, "Long-wavelength resonant vertical-cavity LED/ photodetector with a 75-nm tuning range," IEEE Photon. Technol. Lett., vol. 9, no. 6, pp. 725-727, Jun. 1997.
17. W. S. Rabinovich, T. H. Stievater, N. A. Papanicolaou, D. S. Katzer, and P. G. Goetz, "Demonstration of a microelectromechanical tunable asymmetric Fabry-Pérot quantum well modulator," Appl. Phys. Lett. vol. 83, pp. 1923-1925, Sep. 2003.
18. J. Daleiden, N. Chitica, M. Strassner, A. Spisser, J. L. Leclercq, P. Viktorovitch, D. Rondi, E. Goutain, J. Peerlings, J. Pfeiffer, R. Reimenschneider, and K. Hjort, "Tunable InP/air gap Fabry Perot filter for wavelength division multiplex fiber optical transmission," in Proc. 11th Int. Conf. InP and Related Materials, May 16-20, 1999, pp. 285-287. Paper TuA3-4.
19. D. I. Babiæ and S. W. Corzine, "Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors," IEEE J. Quantum Electron, vol. 28, no. 2, pp. 514-524, Feb. 1992.
20. H. Ghafouri-Shiraz, Fundamentals of Laser Diode Amplifiers, West Sussex, U.K.: Wiley, 1996.
21. L. A. Coldren and E. R. Hegblom, "Fundamental issues in VCSEL design," in Vertical-Cavity Surface-Emitting Lasers, C. W. Wilmsen, H. Temkin, and L. A. Coldren, Eds. Cambridge, U.K.: Cambridge Univ. Press, 1999, pp. 32-67.
22. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
23. P. Royo, R. Koda, and L. A. Coldren, "Vertical cavity semiconductor optical amplifiers: Comparison of Fabry-Perot and rate equation approaches," IEEE J. Quantum Electron., vol. 38, no. 3, pp. 279-284, Mar. 2002.
24. E. S. Björlin and J. E. Bowers, "Noise figure of vertical-cavity semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 38, no. 1, pp. 61-66, Jan. 2002.
25. M. C. Larson, "Microelectromechanical wavelength-tunable vertical-cavity light emitters and lasers," Ph.D. dissertation, Stanford Univ., Stanford, CA, 1996.
26. P. Hariharan, Optical Interferometry. Sydney, Australia: Academic, 2003.
27. F. Sugihwo, M. C. Larson, and J. S. Harris, "Micromachined widely tunable vertical cavity laser diodes," J. Microelectromech. Syst. vol. 7, pp. 48-55, Mar. 1998.
28. C.-C. Lin, W. A. Martin, and J. S. Harris, "Optomechanical model of surface micromachined tunable optoelectronic devices," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 1, pp. 80-87, Jan.-Feb. 2002.
29. S. Greek. R. Gupta, and K. Hjort, "Mechanical considerations in the design of a micromechanical tuneable InP-based WDM filter," J. Micro-electromech. Syst., vol. 8, pp. 328-334, Sep. 1999.
30. W. C. Young, Roark's Formulas for Stress and Strain. New York: McGraw-Hill, 1989.
31. E. K. Chan, "Characterization and modeling of electrostatically actuated polysilicon micromechanical devices," Ph.D. dissertation, Stanford Univ., Stanford, CA, 1999.
32. 2-Au microbridges," in Proc. Mat. Sci. Microelectromech. Syst. (MEMS) Devices II Mater. Res. Soc. Symp., vol. 605, Nov. 29-Dec. 1 1999, pp. 223-228.
33. S. Decai, W. Fan, P. Kner, J. Boucart, T. Kageyama, Z. Dongxu, R. Pathak, R. F. Nabiev, and W. Yuen, "Long wavelength-tunable VCSEL's with optimized MEMS bridge tuning structure," IEEE Photon. Technol. Lett., vol. 16, no. 3, pp. 714-716, Mar. 2004.
34. J. A. Pelesko and D. H. Bernstein, Modeling MEMS and NEMS. Boca Raton, FL: Chapman and Hall/CRC, 2003.
35. F. Sugihwo, M. Larson, and J. S. Harris Jr., "Simultaneous optimization of membrane reflectance and tuning voltage for tunable vertical cavity lasers," Appl. Phys. Lett., vol. 72, pp. 10-12, Jan. 1998.
36. A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babiæ, A. L. Holmes Jr., Y.-L. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: materials issues and device results," IEEE J. Sei. Topics Quantum Electron., vol. 3, no. 3, pp. 943-951, Jun. 1997.
37. S. Irmer. J. Daleiden, V. Rangelov, C. Prott. F. Romer, M. Strassner, A. Tarraf, and H. Hillmer, "Ultralow biased widely continuously tunable fabry-Perot filter," IEEE Photon. Technol. Lett., vol. 15, no. 3, pp. 434-436, Mar. 2003.
38. F. Sugihwo, "Design and fabrication of wavelength tunable optoelectronic devices," Ph.D. dissertation, Stanford Univ., Stanford, CA, 1998.
39. x deformable mirrors," IEEE Photon. Technol. Lett., vol. 10, no. 3, pp. 394-396, Mar. 1998.
40. M. Strassner, N. Chitica, and A. Tarraf, "Investigations of growth conditions for InP suited for micro opto electro mechanical systems for data communication," in Proc. 14th Int. Conf. InP and Related Materials, May 12-16, 2002. pp. 351-354. Paper A4-5.
41. T. Kimura, E. S. Bjölin, Q. Chen, C. S. Wang, and J. E. Bowers, "High output power 1540-nm vertical-cavity semiconductor optical amplifiers," in Proc. 16th Int. Conf InP and Related Materials. 31 May-4 June 2004, pp. 704-707. Paper FA2-3.