Long Wavelength-Tunable VCSELs With Optimized MEMS Bridge Tuning Structure

IEEE Photonics Technology Letters

Volumn 16, Issue 3, 2004, Pages 714-716

  Sun, Decai ^a   Fan, Wenjun ^a   Kner, Peter ^a   Boucart, Julien ^a   Kageyama, Takeo ^a   Zhang, Dongxu ^a   Pathak, Rajiv ^a   Nabiev, Rashit F ^a   Yuen, Wupen ^a  

^a NONE   (United States)

Author keywords

Long wavelength; Microelectromechanical system (MEMS); Quantum well; Semiconductor laser; Tunable laser; Tunnel junction; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ACCELERATION; BIT ERROR RATE; CONTINUOUS WAVE LASERS; ELECTRIC POTENTIAL; LIGHT TRANSMISSION; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; SINGLE MODE FIBERS; TUNING; TUNNEL JUNCTIONS;

LONG WAVELENGTH; TUNABLE LASER; VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL);

SEMICONDUCTOR LASERS;

EID: 1642602782     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.823743     Document Type: Article

References (10)

1. N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, J. E. Bowers, and E. L. Hu, "64°C continuous-wave operation of 1.5-mm vertical-cavity laser," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 359-365, Apr. 1997.
2. J. Boucart, C. Starck, F. Gaborit, A. Plais, N. Bouché, E. Derouin, L. Goldstein, C. Fortin, D. Carpentier, P. Salet, F. Brillouet, and J. Jaacquet, "Metamorphic DBR and tunnel junction injection, a CW-RT monolithic long-wavelength VCSEL," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 520-529, May/June 1999.
3. W. Yuen, G. S. Li, R. F. Nabiev, J. Boucart, P. Kner, R. J. Stone, D. Zhang, M. Beaudoin, T. Zheng, C. He, K. Yu, M. Jansen, D. P. Worland, and C. J. Chang-Hasnain, "High-performance 1.6 mm single-epitaxy-top-emitting-VCSEL," Electron. Lett., vol. 36, pp. 1-2, 2000.
4. M. Ortsiefer, R. Shau, G. Bohm, F. Kohler, and M.-C. Amann, "Low-threshold index-guided 1.5 mm long-wavelength vertical-cavity surface-emitting laser with high efficiency," Appl. Phys. Lett., vol. 76, no. 16, pp. 2179-2181, Apr. 2000.
5. M. Y. Li, W. Yuen, G. S. Li, and C. J. Chang-Hasnain, "Top emitting micromechanical VCSEL with a 31.6 nm tuning range," IEEE Photon. Technol. Lett., vol. 10, pp. 18-20, Jan. 1998.
6. D. A. Ackerman. J. E. Johnson, L. J.-P. Ketelsen, J. M. Geary, W. A. Asous, F. S. Walters, J. M. Freund, S. Hybertsen, K. G. Glogovsky, C. W. Lentz, C. L. Reynolds, R. B. Bylsma, E. J. Dean, and T. L. Koch, "Tunable semiconductor lasers for WDM telecommunications," in Proc. 2001 Indium Phosphide Related Materials, Nara, Japan, pp. 571-574.
7. P. Tayebati, P. Wang, D. Vakhshoori, C.-C. Lu, M. Azimi, and R. N. Sacks, "Half-symmetric cavity tunable microelectromechanical VCSEL with sing spatial mode," IEEE Photon. Technol. Lett., vol. 10, pp. 1679-1681, Dec. 1998.
8. F. Sugihwo, M. C. Larson, and J. S. Harris, "Simultaneous optimization of membrane reflectance and tuning voltage for tunable vertical cavity lasers," Appl. Phys. Lett., vol. 72, no. 1, pp. 10-12, 1998.
9. P. Kner, T. Kageyama, J. Boucart, R. Stone, D. Sun, R. F. Nabiev, and W. Yuen, "A long-wavelength MEMS tunable VCSEL incorporating a tunnel junction," IEEE Photon. Technol. Lett, vol. 15, pp. 1183-1185, Sept. 2003.
10. J. Boucart, R. Pathak, M. Beaudoin, P. Kner, D. Sun, D. Zhang, R. J. Stone, R. F. Nabiev, and W. Yuen, "Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR," IEEE Photon. Technol. Lett., vol. 15, pp. 1186-1188. Sept. 2003.