Investigations of growth conditions for InP suited for micro opto electro mechanical systems for data communication

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 351-354

  Strassner, M ^a,c   Chitica, N ^a,c   Tarraf, A ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF KASSEL   (Germany)

^c Mitel Semiconductor AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE MICROMECHANICS; COMPRESSIVE STRESS; CRYSTAL GROWTH; DATA COMMUNICATION SYSTEMS; HETEROJUNCTIONS; MICROMACHINING; MICROOPTICS; OPTOELECTRONIC DEVICES;

RESIDUAL STRAIN;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036053382     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2002.1014418     Document Type: Article

References (8)

1. Highly selective and widely tunable 1.55 μm InP/air-gap micromachined fabry-perot filter for optical communications
2. x/AlGaAs DBR
3. All-epitaxial, single-fused 1.55μm vertical cavity laser based on an InP Bragg reflector
4. Fabrication of InP/air-gap distributed Bragg reflectors and micro-cavities
5. Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures
6. Quantitative evaluation of growth induced residual strain in inp epitaxial micromechanical structures
7. III-V semiconductor material for tunable Fabry-Perot Filter for coarse and dense WDM systems
8. Monolithic, Imp based tunable filter with 10 nm bandwidth for optical data interconnects in the 1550nm band