Characteristics of HfO2 pMOSFET prepared by B2H6 plasma doping and KrF excimer laser annealing

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 157-159

  Baek, Sungkweon ^a   Heo, Sungho ^a   Choi, Haejung ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Excimer laser annealing (ELA); HfO2 gate dielectric; Metal gate; Plasma doping (PLAD); pMOSFETs

Indexed keywords

ALUMINUM; ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; EXCIMER LASERS; HAFNIUM COMPOUNDS; LASER BEAM EFFECTS; PERMITTIVITY; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

EXCIMER LASER ANNEALING (ELA); GATE DIELECTRIC; METAL GATE; PLASMA DOPING (PLAD);

MOSFET DEVICES;

EID: 15544388664     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.842438     Document Type: Article

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