The interface properties of MIS structures on anodically oxidized GaSb

Semiconductor Science and Technology

Volumn 12, Issue 9, 1997, Pages 1140-1146

  Houston, G L B ^a   Chen, Y ^a,b   Singleton, J ^a   Mason, N J ^a   Walker, P J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3943065683     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/9/013     Document Type: Article

References (38)

1. Dutta P S, Sangunni K S, Bhat H L and Kumar V 1995 Phys. Rev. B 51 2153
2. Milnes A G and Polyakov A Y 1993 Solid State Electron. 36 803
3. Beresford R, Luo L F and Wang W I 1989 Appl. Phys. Lett. 55 694
4. Chen C H, Chui C T, Su L C, Huang K T, Shin J and Stringfellow G B 1993 J. Electron. Mater. 22 87
5. Dutta P S, Bhat H L and Kumar V 1997 J. Appl. Phys. 81 5821
6. Polyakov A Y, Stam M, Milnes A G and Schlesmger T E 1992 Mater. Sci. Eng. B 12 337
7. Lu Z, Jiang Y, Wang W I, Teich M C and Osgood R M Jr 1992 J. Vac. Sci. Technol. B 10 1856
8. Pérotin M, Coudray P, Gouskov L, Luquet H, Llinarès C, Bonnet J J, Soonckindt L and Lambert B 1994 J. Electronic Mater. 23 7
9. Fischer C W, Leslie N and Etchells A 1976 J. Vac. Sci. Technol. 13 59
10. Chen Y 1995 DPhil Thesis University of Oxford
11. Basu S, Basu N and Barman P 1991 Mater. Sci. Eng. B 9 47
12. Weimann G 1979 Thin Solid Films 56 173
13. Chen Y, Symons D M, Lakrimi M, Salesse A, Houston G B, Nicholas R J, Mason N J and Walker P J 1994 Superlatt. Microstruct. 15 41
14. Salesse A 1995 PhD Thesis Centre d'Electronique de Montpellier, Université de Montpellier II
15. Meiners L G and Wieder H H 1988 Semiconductor Surface Passivation (Amsterdam: North-Holland)
16. Schwartz G P, Gualtieri G J, Griffiths J E, Thurmond C D and Schwartz B 1980 J. Electrochem. Soc. 127 2488
17. Kitamura N, Kikuchi T, Kakehi M and Wada T 1984 Japan. J. Appl. Phys. 23 1534
18. Barman P and Basu S 1992 Appl. Surf. Sci. 55 173
19. Graham R M, Jones A C, Mason N J, Rushworth S, Salesse A, Seong T-Y, Booker G, Smith L and Walker P J 1993 Semicond. Sci. Technol. 8 1797
20. Aspnes D E, Schwartz B, Studna A A, Derick L and Koszi L A 1977 J. Appl. Phys. 48 3510
21. Heiman F P and Warfield G 1965 IEEE Trans. Electron Devices ED-12 167
22. Bouchikhi B, Michel C, Valmont G, Ravelet S and Lepley B 1986 Semicond. Sci. Technol. 1 143
23. Foster J E and Swartz J M 1970 J. Electrochem. Soc. 117 1410
24. Wieder H H 1978 J. Vac. Sci. Technol. 15 1498
25. Meiners LG 1978 J. Vac. Sci. Technol. 15 1402
26. Kohn E and Hartnagel H L 1977 Solid State Electron. 21 409
27. Lakrimi M 1997 private communication
28. Bilz H J, Leonhardt G, Kuhn G, Lochke K and Meisel A 1978 Krist. Tech. 13 363
29. Wilmsen C W 1981 J. Vac. Sci. Technol. 19 279
30. CRC Handbook of Chemistry and Physics 1996 76th edn (Boca Raton, FL: Chemical Rubber Company)
31. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley-Interscience) p 369
32. Choujaa A, Chave J, Blanchet R and Viktorovitch P 1986 J. Appl. Phys. 60 2191
33. Nicollian E H and Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: Wiley) pp 176-233
34. Kim J C 1974 IEEE Trans. Parts. Hybrids Packaging PHP-10 200
35. Park D-G, Mohammad S N, Chen Z and Morkoç H 1997 J. Vac. Sci. Technol. B 15 252
36. Deuling H, Klausman E and Goetzberger A 1972 Solid State Electron. 15 559
37. Malmin P C 1971 Phys. Status Solidi a 8 597
38. Foxon C T, Harris J J, Hilton D, Hewett J and Roberts C 1989 Semicond. Sci. Technol. 4 582