Interface reactivity of Pr and SiO2 at 4H-SiC(0 0 0 1)

Materials Science and Engineering: B

Volumn 118, Issue 1-3, 2005, Pages 19-22

  Schmeisser D ^a   Lupina, G ^b   Muessig, H J ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

4H SiC; High k dielectric layer; Interface reactivity; Photoelectron spectroscopy

Indexed keywords

ANNEALING; BINDING ENERGY; EVAPORATION; PHOTOELECTRON SPECTROSCOPY; REACTION KINETICS; SILICA; SILICON CARBIDE; SUBSTRATES; TEMPERATURE CONTROL;

4H-SIC; HIGH-K DIELECTRIC LAYERS; INTERFACE REACTIVITY; OXIDE LAYERS;

PRASEODYMIUM;

EID: 15444371664     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.066     Document Type: Conference Paper

References (16)

1. P. Tobias, P. Martensson, A. Baranzahi, P. Salomonsson, I. Lundström, L. Abom, and A. Lloyd Spetz Sens. Actuat. B 47 1998 125 130
2. V.V. Afanas'ev, A. Stesmans, F. Chen, A. Campbell, and R. Smith Appl. Phys. Lett. 82 2003 922
3. D. Schmeißer, D. Batchelor, R.P. Mikalo, P. Hoffmann, and A. Lloyd Spetz Appl. Surf. Sci. 184 1-4 2001 340; D. Schmeißer, R.P. Mikalo, P. Hoffmann, Th. Seyller, L. Ley, and A. Lloyd Spetz Appl. Surf. Sci. 184 2001 342; R.P. Mikalo, P. Hoffmann, D.R. Batchelor, D. Schmeißer, A. Lloyd Spetz, and I. Lundstroem Mater. Sci. Forum 353-356 2001 219.
4. D. Schmeißer, D. Batchelor, R.P. Mikalo, P. Hoffmann, and A. Lloyd Spetz Appl. Surf. Sci. 184 1-4 2001 340; D. Schmeißer, R.P. Mikalo, P. Hoffmann, Th. Seyller, L. Ley, and A. Lloyd Spetz Appl. Surf. Sci. 184 2001 342; R.P. Mikalo, P. Hoffmann, D.R. Batchelor, D. Schmeißer, A. Lloyd Spetz, and I. Lundstroem Mater. Sci. Forum 353-356 2001 219.
5. D. Schmeißer, D. Batchelor, R.P. Mikalo, P. Hoffmann, and A. Lloyd Spetz Appl. Surf. Sci. 184 1-4 2001 340; D. Schmeißer, R.P. Mikalo, P. Hoffmann, Th. Seyller, L. Ley, and A. Lloyd Spetz Appl. Surf. Sci. 184 2001 342; R.P. Mikalo, P. Hoffmann, D.R. Batchelor, D. Schmeißer, A. Lloyd Spetz, and I. Lundstroem Mater. Sci. Forum 353-356 2001 219.
6. A. Goryachko, I. Paloumpa, G. Beuckert, Y. Burkov, and D. Schmeißer Physica Status Solidi C 1/2 2004 265
7. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243; S. Sayan, E. Garfunkel, and G.D. Wilk J. Appl. Phys. 94 2003 928.
8. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243; S. Sayan, E. Garfunkel, and G.D. Wilk J. Appl. Phys. 94 2003 928.
9. D. Schmeißer Mater. Sci. Semiconductor Process. 6 2003 59
10. D. Schmeißer, and H.-J. Müssig J. Phys.: Condensed Matt. 16 2004 153
11. D.R. Batchelor, R. Follath, and D. Schmeißer Nuclear Instr. Methods Phys. Res. A 467-468 2001 470; P. Hoffmann, R.P. Mikalo, and D. Schmeißer Solid-State Electron. 44 2000 837.
12. D.R. Batchelor, R. Follath, and D. Schmeißer Nuclear Instr. Methods Phys. Res. A 467-468 2001 470; P. Hoffmann, R.P. Mikalo, and D. Schmeißer Solid-State Electron. 44 2000 837.
13. N. Sieber, B.F. Mantel, Th. Seyller, J. Ristein, L. Ley, T. Heller, D.R. Batchelor, and D. Schmeißer Appl. Phys. Lett. 78 2001 1216
14. K.B. Chung, Y.K. Choi, M.H. Jang, M. Noh, and C.N. Whang J. Appl. Phys. 94 1 2003 212
15. J.X. Wu, Z.M. Wang, M.S. Ma, and S. Li J. Phys.: Condensed Matt. 15 2003 5857
16. G. Lupina, J. Dabrowski, H.-J. Müssig, D. Schmeißer, E-MRS, Strasbourg, Symposium C, Number C-IV.4, 2004.