Oxide growth on SiC(0 0 0 1) surfaces

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 340-345

  Schmeisser D ^a   Batchelor, D R ^a   Mikalo, R P ^a   Hoffmann, P ^a   Lloyd Spetz, A ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Depth profiling; FET device; Ozone and thermal oxidation; SiC oxide interface; Silicate layer

Indexed keywords

FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); OXIDATION; OXIDES; PHOTOELECTRON SPECTROSCOPY; THERMAL EFFECTS;

THERMAL OXIDATION;

SILICON CARBIDE;

EID: 0035852214     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00514-1     Document Type: Article

References (16)