Phase selective synthesis of gadolinium suicide films on Si(111) using an interfacial SiO2 layer

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 212-215

  Chung, K B ^a   Choi, Y K ^a   Jang, M H ^a   Noh, M ^a   Whang, C N ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DECOMPOSITION; FILM GROWTH; INTERFACES (MATERIALS); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICA; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION;

STRUCTURAL TRANSFORMATIONS;

GADOLINIUM COMPOUNDS;

EID: 0042842620     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581342     Document Type: Article

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