Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111)

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 4, 2004, Pages

  Rogero, C ^a   Koitzsch, C ^b   Gonzalez M E ^a,c   Aebi, P ^b   Martin Gago J A ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^c UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANIDE; METAL; SILICIDE; SILICON; UNCLASSIFIED DRUG;

ARTICLE; ATOM; CALCULATION; CHEMICAL BINDING; CHEMICAL STRUCTURE; ELECTRONICS; ENERGY; MATHEMATICAL ANALYSIS; MATHEMATICAL PARAMETERS; THEORY; ULTRAVIOLET SPECTROSCOPY;

EID: 1542726255     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.045312     Document Type: Article

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