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Volumn 345, Issue 3, 1996, Pages 247-260

Interface structure of Si(111)-(√3 × √3)R30°-ErSi2-x

Author keywords

Erbium; Metal semiconductor interfaces; Reflection high energy electron diffraction (RHEED); Silicides; Silicon; Single crystal epitaxy; Surface structure

Indexed keywords

CHEMICAL BONDS; EPITAXIAL GROWTH; ERBIUM; ERBIUM COMPOUNDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; STRAIN; SUBSTRATES; SURFACE MEASUREMENT; SURFACE STRUCTURE; X RAY DIFFRACTION;

EID: 0029733779     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00875-6     Document Type: Article
Times cited : (35)

References (32)
  • 28
    • 85030000407 scopus 로고    scopus 로고
    • hkl̄. Therefore, the fractional order rods are symmetrical around l = 0 in a p6mm symmetry
    • hkl̄. Therefore, the fractional order rods are symmetrical around l = 0 in a p6mm symmetry.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.