Quasiparticle effects on tunneling currents: A study of C2H4 adsorbed on the Si(001)-(2 X 1) surface

Physical Review Letters

Volumn 86, Issue 10, 2001, Pages 2110-2113

  Rignanese, G M ^a,b,c   Blase, X ^b,c,d   Louie, S G ^b,c  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UMR CNRS 5586   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; PHOTOEMISSION; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE TREATMENT;

LOCAL DENSITY APPROXIMATION; PHOTOEMISSION SPECTRA; QUASIPARTICLE EFFECTS; SELF ENERGY CORRECTIONS; TUNNELING CURRENTS;

ETHYLENE;

EID: 17544398490     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.2110     Document Type: Article

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