메뉴 건너뛰기




Volumn 504, Issue , 2002, Pages 183-190

Structural study of 2D dysprosium germanide and silicide by means of quantitative LEED I-V analysis

Author keywords

Germanium; Lanthanides; Low energy electron diffraction (LEED); Metal semiconductor interfaces; Silicides; Silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

EID: 0037140049     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01065-8     Document Type: Article
Times cited : (21)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.