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Volumn 504, Issue , 2002, Pages 183-190
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Structural study of 2D dysprosium germanide and silicide by means of quantitative LEED I-V analysis
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Author keywords
Germanium; Lanthanides; Low energy electron diffraction (LEED); Metal semiconductor interfaces; Silicides; Silicon
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
INTERFACES (MATERIALS);
LOW ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SURFACE STRUCTURE;
RARE-EARTH LAYERS;
DYSPROSIUM COMPOUNDS;
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EID: 0037140049
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)01065-8 Document Type: Article |
Times cited : (21)
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References (21)
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