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Volumn 81, Issue 24, 1998, Pages 5374-5377

Ab Initio Calculation of Self-Energy Effects on Optical Properties of GaAs(110)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

EID: 0032517704     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.5374     Document Type: Article
Times cited : (95)

References (40)
  • 1
    • 0003972468 scopus 로고
    • P. Halevi (Elsevier, Amsterdam, and references therein
    • R. Del Sole in Photonic Probes of Surfaces, P. Halevi (Elsevier, Amsterdam, 1995), p. 131, and references therein.
    • (1995) Photonic Probes of Surfaces , pp. 131
    • Del Sole, R.1
  • 7
    • 85037254367 scopus 로고    scopus 로고
    • World Scientific, Singapore
    • M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 815.
    • (1996) , pp. 815
    • Scheffler, M.1    Zimmermann, R.2
  • 12
    • 22144469121 scopus 로고
    • H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New York
    • L. Hedin and S. Lundqvist in Solid State Physics, H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New York, 1969), Vol. 23, p. 1.
    • (1969) Solid State Physics , vol.23 , pp. 1
    • Hedin, L.1    Lundqvist, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.