Carbon antisite clusters in SiC: A possible pathway to the DII center

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 4, 2004, Pages

  Mattausch, Alexander ^a   Bockstedte, Michel ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON;

AB INITIO CALCULATION; ARTICLE; CHEMICAL STRUCTURE; ENERGY; MATHEMATICAL ANALYSIS; PHONON; PHOTOLUMINESCENCE; THERMOSTABILITY; VIBRATION;

EID: 1542726254     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.045322     Document Type: Article

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