DII revisited in an modern guise - 6H and 4H SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 493-496

  Sridhara, S G ^a   Nizhner, D G ^a   Devaty, R P ^a   Choyke, W J ^a   Dalibor, T ^b   Pensl, G ^b   Kimoto, T ^c  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

Defects; Ion Implantation; Photoluminescence

Indexed keywords

ANNEALING; COLOR CENTERS; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS;

DEFECT SPECTRUM;

SILICON CARBIDE;

EID: 0031705483     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (8)

1. Lyle Patrick and W.J. Choyke, Phys. Rev. B 5 (1972), p. 3253.
2. Lyle Patrick and W.J. Choyke, J. Phys. Chem. Solids 34 (1973), p. 565.
3. W.J. Choyke and Lyle Patrick, Inst. Phys. Conf. Ser. No. 16 (1972), p. 218.
4. G. Herzberg, Spectra of Diatomic Molecules (van Nostrand, NewYork 1950), p. 513.
5. S.A. Solin and A.K. Ramdas, Phys. Rev. B 1 (1970), p. 1687.
6. H. Itoh and C. Peppermüller, Private Communication.
7. C. Peppermüller, R. Helbig, K. Rottner and A. Schöner, Appl. Phys. Lett. 70 (1997), p. 1014.
8. T. Troffer, C. Peppermüller, G. Pensl, K. Rottner and A. Schöner, J. Appl. Phys. 80 (1996), p.3739.