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Solid State Communications

Volumn 122, Issue 6, 2002, Pages 323-327

Effect of nitrogen on the exciton binding energy in GaxIn1-xNyAs1-y/GaAs quantum well

(3) Ryczko, K a Sek G a Misiewicz, J a

a WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

A. semiconductors:A. quantum wells:D: exciton binding energy

Indexed keywords

BINDING ENERGY; EXCITONS; GROUND STATE; NITROGEN; PERMITTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS;

MOLE FRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036566553 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(02)00111-4 Document Type: Article

Times cited : (21)

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