Microstructure dependence of the electrical properties of (Ba,Sr)TiO 3 thin film deposited on (La,Sr)MnO3 conductive layer

Journal of Crystal Growth

Volumn 276, Issue 3-4, 2005, Pages 498-506

  Miao, Jun ^a   Cao, Lixin ^a   Yuan, Jie ^a   Chen, Weiran ^a   Yang, Hao ^a   Xu, Bo ^a   Qiu, Xianggang ^a   Zhao, Bairu ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A1. Crystal structure; A3. Laser epitaxy; B1. Perovskites; B2. Ferroelectric materials; B2. Magnetic materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM TITANATE; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; MAGNETIC MATERIALS; MICROSTRUCTURE; PEROVSKITE; PULSED LASER DEPOSITION;

DIELECTRIC TUNABIILITY; LASER EPITAXY; REMNANT POLARIZATION; SATURATION POLARIZATION;

THIN FILMS;

EID: 15344341196     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.406     Document Type: Article

References (28)

1. Y. Gim, T. Hudson, Y. Fan, C. Kwon, A.T. Findikoglu, B.J. Gibbons, B.H. Park, and Q.X. Jia Appl. Phys. Lett. 77 2000 1200
2. M. Izuha, K. Abe, M. Koike, and N. Fukushima Appl. Phys. Lett. 70 1997 1405
3. B. Nagraj, T. Sawhney, S. Perusse, S. Aggarwal, R. Ramesh, V.S. Kaushik, S. Zafar, R.E. Jones, J.H. Lee, V.B. Alu, and J. Lee Appl. Phys. Lett. 74 1999 3194
4. B.S. Kim, S.H. Oh, S.Y. Son, K.W. Park, Z.R. Dai, and F.S. Ohuchi J. Appl. Phys. 87 2000 4425
5. S.G. Yoon, J.C. Lee, and A. Safari J. Appl. Phys. 76 1994 2999
6. C.S. Hwang, B.T. Lee, and C.S. Kang J. Appl. Phys. 83 1998 3703
7. K.K. Park, and J.H. Cho Appl. Phys. Lett. 77 2000 435
8. W.B. Wu, K.U. Wong, X.G. Li, C.L. Choy, and Y.H. Zhang J. Appl. Phys. 87 2000 3006
9. F. Mitsugi, Y. Yamagata, T. Ikegami, K. Ebihara, J. Narayan, and A.M. Grishin Jpn. J. Appl. Phys. 39 2000 5418
10. A.M. Grishin, S.I. Khartsev, and P. Johnsson Appl. Phys. Lett. 74 1999 1015
11. S.G. Lu, X.H. Zhu, C.L. Mak, K.H. Wang, H.L.W. Chan, and C.L. Choy Appl. Phys. Lett. 82 2003 2877
12. S. Mathews, R. Rameah, T. Venkatesan, and J. Benedetto Science 276 1997 238
13. B.A. Baument, L.H. Chang, A.T. Matsuda, T.L. Tsai, C.J. Tracy, R.B. Gregory, P.L. Fejes, N.G. Cave, and W. Chen J. Appl. Phys. 82 1997 2558
14. S.Y. Lee, and T.Y. Tseng Appl. Phys. Lett. 80 2002 1797
15. W.J. Lee, H.G. Kim, and S.G. Yoon J. Appl. Phys. 80 1996 5891
16. Kim Taegon, Oh Jeongmin, Kim Yongjo, Moon Taeho, Hong Kngsun, and Park Byungwoo Jpn. J. Appl. Phys. 42 2003 1315
17. M.W. Cole, W.D. Nothwang, C. Hubbard, E. Ngo, and M. Ervin J. Appl. Phys. 93 2003 9218
18. J. Miao, W.R. Chen, L. Zhao, F.C. Zhang, B. Chen, H. Yang, G.X. Chen, W. Peng, B. Xu, X.G. Qiu, B.R. Zhao, J. Appl. Phys., in revision
19. J.G. Cheng, X.J. Meng, B. Li, J. Tang, S.L. Guo, J.H. Chu, M. Wang, H. Wang, and Z. Wang Appl. Phys. Lett. 75 1999 2132
20. S.L. Miller, J.R. Schwank, R.D. Nasby, and M.S. Rodgers J. Appl. Phys. 70 1991 2849
21. M.J. Dalberth, R.E. Staaber, J.C. Price, C.T. Rogers, and David Galt Appl. Phys. Lett. 72 1998 507
22. K.M. Johnson J. Appl. Phys. 33 1962 2826
23. A.F. Devonshire Philos. Mag. 40 1949 1040
24. B.H. Park, and Q.X. Jia Jpn. J. Appl. Phys. 41 2002 7222
25. S.J. Lee, S.E. Moon, H.C. Ryu, M.H. Kwak, and Y.T. Kim Jpn. J. Appl. Phys. 41 2002 4597
26. S.M. Sze Physics of Semiconductor Devices second ed. 1981 Wiley New York
27. S.T. Chang, and J.Y. Lee Appl. Phys. Lett. 80 2002 655
28. H. Fujisawa, M. Shimizu, T. Shiosaki, T. Horiuchi, and K. Matsushige Appl. Phys. Lett. 71 1997 416