Problems and solutions for low pressure, high density, inductively coupled plasma dry etch applications

Surface and Coatings Technology

Volumn 97, Issue 1-3, 1997, Pages 10-14

  Puttock, Mark ^a  

^a Electrotech   (United Kingdom)

Author keywords

Aluminium alloy; Copper etching; Dry etching; Inductively coupled plasma; Photoresist dry develop

Indexed keywords

ALUMINUM ALLOYS; BROMINE COMPOUNDS; COPPER; INTEGRATED CIRCUIT MANUFACTURE; MICROELECTRONIC PROCESSING; OXYGEN; PHOTORESISTS; SILICA;

HYDROGEN BROMIDE; INDUCTIVELY COUPLED PLASMA ETCHING;

PLASMA ETCHING;

EID: 0031346733     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00281-8     Document Type: Article

References (5)

1. M. Puttock, A. Iacopi, G. Powell, M. Clausen, P. Bennett, Inductively coupled plasma source for reactive ion etch applications: metal interconnect etching, in: Proc. 10th Symp. Plasma Processing, 1994, Vol 94-20, Electrochemical Society, Pennington, NJ.
2. G. Powell, M. Puttock, K. Powell, A. Iacopi, D. Tossell, C. Kuhl, Al alloy etching with high resist selectivity in an ICP with Electrostatic wafer clamping, in: Proc. 10th Int. Colloq. Plasma Processes, CIP'95, Antibes, France, p 175.
3. K. Koshino, Jpn. J. App. Phys. 32 (1993) 30.
4. J. Eble, V. De, J. Davis, J. Meindl, Optimal multilevel interconnect technologies for gigascale integration (GSI), VMIC Conf., June 18-20, 1996, ISMIC-106/96/0040(c).
5. Y. Igarashi, T. Yamanobe, I. Toshio, Thermal stability of copper interconnects fabricated by dry-etching process, Thin Solid Films 262 (1995) 124-128.