Interface-controlled gate of GaAs metal-semiconductor field-effect transistor

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2499-2501

  Kang, Min Gu ^a   Park, Hyung Ho ^a   Kim, Haecheon ^b  

^a Yonsei University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING STATE; DEFECTIVE STATE; DEVICE PARAMETERS; DEVICE PROPERTIES; GAAS; GATE-LEAKAGE CURRENT; SULFIDATION;

ELECTRIC BREAKDOWN; GALLIUM ARSENIDE; HYDROGENATION; LEAKAGE CURRENTS; MESFET DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM;

TRANSISTORS;

EID: 79956052205     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467975     Document Type: Article

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