Surface passivation of GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1837-1842

  Charache, Greg W ^a   Akram, S ^b   Maby, Edward Wilfrid ^b   Bhat, I B ^c  

^a Knolls Atomic Power Laboratory   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c Center for Integrated Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC IMPEDANCE; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SURFACE CLEANING;

GALLIUM ARSENIDE SURFACE PASSIVATION FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

MESFET DEVICES;

EID: 0031271026     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641350     Document Type: Article

References (33)

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