Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN

Semiconductor Science and Technology

Volumn 20, Issue 3, 2005, Pages 279-285

  Starikov, E ^a,c   Shiktorov, P ^a   Gruznskis V ^a   Reggiani, L ^b   Varani, L ^c   Vaissiere J C ^c   Palermo, C ^c  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^c UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE; DIFFUSION; GALLIUM COMPOUNDS; IMPURITIES; LIGHT SCATTERING; MONTE CARLO METHODS; PHONONS; PIEZOELECTRICITY;

DIFFUSION NOISE; HOT-ELECTRON TRANSPORT; PIEZOELECTRIC SCATTERING; POLAR OPTICAL PHONON SCATTERING;

ELECTRON TRANSITIONS;

EID: 14844323100     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/3/004     Document Type: Article

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