Upconversion of partition noise in semiconductors operating under periodic large-signal conditions

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 16, 2003, Pages

  Shiktorov, P ^a   Starikov, E ^a   Gruzinskis V ^a   Perez S ^b   Gonzalez T ^b   Reggiani, L ^c   Varani, L ^d   Vaissiere J C ^d  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b UNIVERSITY OF SALAMANCA   (Spain)

^c NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^d UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; LOW TEMPERATURE; MOLECULAR DYNAMICS; MONTE CARLO METHOD; NOISE; POLARIMETRY; SEMICONDUCTOR; SIGNAL DETECTION; SPACE; VELOCITY;

EID: 1942418480     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.165201     Document Type: Article

References (28)

1. A. van der Ziel, Noise in Solid State Devices and Circuits (Wiley, New York, 1986).
2. P J. Price, J. Appl. Phys.31, 949 (1960).
3. W. Shockley, J. A. Copeland, and R. P. James, in Quantum Theory of Atoms, Molecules and the Solid State, edited by P. O. Lowdin (Academic, New York, 1966), p. 537.
4. M S. Gupta, J. Appl. Phys.49, 2837 (1978).
5. J P. Nougier, IEEE Trans. Electron Devices41, 2034 (1994).
6. A. Hajimiri and T H. Lee, IEEE J. Solid-State Circuits33, 179 (1998).
7. S. Pérez, T. González, S L. Delage, and J. Obregon, J. Appl. Phys.88, 800 (2000).
8. S. Pérez, T. González, S L. Delage, and J. Obregon, Semicond. Sci. Technol.16, L8 (2001).
9. F. Bonani and G. Ghione, Noise in Semiconductor Devices. Modeling and Simulation (Springer, Berlin, 2001).
10. P. Shiktorov, E. Starikov, V. Gružinskis, L. Reggiani, L. Varani, and J C. Vaissière, Appl. Phys. Lett.80, 4759 (2002).
11. S. Kogan, Electron Noise and Fluctuations in Solids (Cambridge University, Cambridge, England, 1996).
12. W. Fawcett, A D. Boardman, and S. Swain, J. Phys. Chem. Solids31, 1963 (1970).
13. J. S. Bendat and A. G. Piersol, Random Data (Wiley, New York, 1986).
14. B E. Foutz, S K. O’Leary, M S. Shur, and L F. Eastman, J. Appl. Phys.85, 7727 (1999).
15. N. Ishida and T. Kurosawa, Jpn. J. Appl. Phys., Part 164, 2994 (1995).
16. K. Brennan and K. Hess, Solid-State Electron.27, 347 (1984).
17. G. Hill, P N. Robson, and W. Fawcett, J. Appl. Phys.50, 356 (1979).
18. R. Fauquemberdue, J. Zimmermann, A. Kaszynski, and E. Constant, J. Appl. Phys.51, 1065 (1980).
19. R. Grondin, P A. Blakey, J R. East, and E D. Rothman, IEEE Trans. Electron Devices28, 914 (1981).
20. P. Shiktorov, E. Starikov, V. Gružinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J C. Vaissière, Riv. Nuovo Cimento24 (9), 1 (2001).
21. V. Mitin, V. Gruzhinskis, E. Starikov, and P. Shiktorov, J. Appl. Phys.75, 935 (1994).
22. E. Starikov, P. Shiktorov, V. Gružinskis, J P. Nougier, J C. Vaissiere, L. Varani, and L. Reggiani, J. Appl. Phys.79, 242 (1996).
23. T. González and D. Pardo, Solid-State Electron.39, 555 (1996).
24. P. Shiktorov, V. Gružinskis, E. Starikov, L. Reggiani, and L. Varani, Phys. Rev. B54, 8821 (1996).
25. V. Gružinskis, J. Liberis, A. Matulionis, P. Sakalas, E. Starikov, P. Shiktorov, B. Szentpali, V. Van Tuyen, and H L. Hartnagel, Appl. Phys. Lett.73, 2488 (1998).
26. B R. Nag, S R. Ahmed, and M. Deb Roy, Appl. Phys. A: Solids Surf.A41, 197 (1986).
27. L. Varani, L. Reggiani, T. Kuhn, P. Houlet, T. González, and D. Pardo, Vuoto Sci. Tech. XXII, 116 (1992).
28. S. Pérez and T. González, Semicond. Sci. Technol.17, 696 (2002).