Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Fitzer, Niels ^a   Kuligk, Angelika ^a   Redmer, Ronald ^a   Städele, Martin ^b   Goodnick, Stephen M ^c   Schattke, Wolfgang ^d  

^a UNIVERSITY OF ROSTOCK   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Arizona State University   (United States)

^d UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; IMPACT IONIZATION; KINETIC ENERGY; MONTE CARLO METHODS; PHONONS; PROBABILITY DENSITY FUNCTION;

ELECTRON-PHONON SCATTERING RATE; VELOCITY-FIELD CHARACTERISTICS;

SEMICONDUCTOR MATERIALS;

EID: 1942516819     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/070     Document Type: Conference Paper

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