High-field thermal noise of holes in silicon: The effect of valence band anisotropy

Journal of Applied Physics

Volumn 80, Issue 12, 1996, Pages 6766-6772

  Hinckley, J M ^a   Singh, J ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343249615     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363805     Document Type: Article

References (19)

1. J. M. Luttinger, Phys. Rev. 102, 1030 (1956).
2. B. Lax and J. G. Mavroides, Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1960), Vol. 11, p. 261.
3. J. C. Hensel and G. Feher, Phys. Rev. 129, 1041 (1963).
4. S. Weinreb and A. R. Kerr, IEEE J. Solid-State Circuits 8, 58 (1973).
5. J. P. Nougier, NATO ASI Ser. B 52, 415 (1980).
6. Y. K. Pozhela, Hot-Electron Transport in Semiconductors, edited by L. Reggiani (Springer, Berlin, 1984), Chap. 4.
7. V. Bareikis, R. Katilius, A. Matulionis, R. Saltis, S. Gantsevich, V. Gurevich, S. Kogan, and A. Shulman, Lith. Phys. J. 31, 3 (1991).
8. L. Reggiani, T. Kuhn, and L. Varani, Appl. Phys. A 54, 411 (1992).
9. J. M. Hinckley and J. Singh, Appl. Phys. Lett. 67, 2966 (1995).
10. J. M. Hinckley and J. Singh, Appl. Phys. Lett. 66, 2727 (1995).
11. A. Van der Ziel, Noise in Solid State Devices and Circuits (Wiley, New York, 1986).
12. J. M. Hinckley and J. Singh, Phys. Rev. B 42, 3546 (1990).
13. J. M. Hinckley and J. Singh, J. Appl. Phys. 76, 4192 (1994).
14. J. M. Hinckley, Ph.D. thesis, University of Michigan, Ann Arbor, 1990.
15. J. M. Hinckley and J. Singh, Phys. Rev. B 41, 2912 (1990).
16. G. Dresselhaus, A. F. Kip, and C. Kittel, Phys. Rev. 98, 368 (1955).
17. M. Tiersten, IBM J. Res. Dev. 5, 122 (1961).
18. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
19. D. M. Caughey and R. E. Thomas, Proc. IEEE 14, 2192 (1967).