Channeling characterization of defects in silicon: An atomistic approach

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 230, Issue 1-4, 2005, Pages 185-192

  Bianconi, M ^a   Albertazzi, E ^a   Balboni, S ^b   Colombo, L ^c   Lulli, G ^a   Satta, A ^a  

^a CNR   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

Defects; Ion implantation; RBS channeling; Silicon

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; CHARACTERIZATION; DEFECTS; ELECTRON ENERGY LEVELS; IMPURITIES; ION IMPLANTATION; MATHEMATICAL MODELS; MATRIX ALGEBRA; MONTE CARLO METHODS; RADIATION DAMAGE; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BINARY COLLISION APPROXIMATION (BCA); INTERSTITIAL ATOMS; RBS-CHANNELING; TETRA-INTERSTITIAL CLUSTER;

ATOMIC PHYSICS;

EID: 14744300443     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.038     Document Type: Conference Paper

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