Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 113-118

  Weber, B ^a   Wendler, E ^a   Gartner K ^a   Stock, D M ^a   Wesch, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; COMPUTER SIMULATION; ION IMPLANTATION; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

DECHANNELING; DISPLACED ATOMS; MULTIPLE IMPLANTATION; WEAKLY DAMAGE SILICON;

SEMICONDUCTING SILICON;

EID: 0030565175     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01198-6     Document Type: Article

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