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Volumn 58, Issue 5, 1998, Pages 2539-2550

Interatomic potential for silicon defects and disordered phases

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EID: 0000590093     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.2539     Document Type: Article
Times cited : (440)

References (74)
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    • Materials Theory, Simulations and Parallel Algorithms, edited by E. Kaxiras, J. Joannopoulos, P. Vashista, and R. Kalia, MRS Symposia Proceedings No. 408 (Materials Research Society, Pittsburgh, PA, 1996), pp. 79-84
    • M. Z. Bazant and E. Kaxiras, Phys. Rev. Lett. 77, 4370 (1996); in Materials Theory, Simulations and Parallel Algorithms, edited by E. Kaxiras, J. Joannopoulos, P. Vashista, and R. Kalia, MRS Symposia Proceedings No. 408 (Materials Research Society, Pittsburgh, PA, 1996), pp. 79-84.
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 4370
    • Bazant, M.1    Kaxiras, E.2
  • 28
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    • A. E. Carlsson, in Many-Atom Interactions in Solids, edited by R. M. Nieminen, M. J. Puska, and M. J. Manninen, Springer Proceedings in Physics Vol. 48 (Springer-Verlag, Berlin, 1990), pp. 257-263.
    • (1990) Many-Atom Interactions in Solids , pp. 257-263
    • Carlsson, A.1
  • 56
    • 0004072123 scopus 로고
    • H. Teichler, in Polycrystalline Semiconductors, edited by J. H. Werner, H. J. Moller, and H. P. Strunk (Springer, New York, 1989), Vol. 35, p. 25.
    • (1989) Polycrystalline Semiconductors , vol.35 , pp. 25
    • Teichler, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.