Different methods for the determination of damage profiles in Si from RBS-channeling spectra: A comparison

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 128-132

  Albertazzi, E ^a   Bianconi, M ^a   Lulli, G ^a   Nipoti, R ^a   Cantiano, M ^b  

^a CNR   (Italy)

^b Optel InP   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; COMPUTER SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; IONS; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; THREE DIMENSIONAL;

CHANNELING ENERGY LOSS PROCESS; DECHANNELING;

RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 0030565066     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01489-6     Document Type: Article

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