Over-coordination and order in hydrogenated nanostructured silicon thin films: Their influence on strain and electronic properties

Journal of Physics Condensed Matter

Volumn 17, Issue 8, 2005, Pages 1279-1288

  Vignoli, S ^a   Melinon P ^a   Masenelli, B ^a   Roca i Cabarrocas, P ^b   Flank, A M ^c   Longeaud, C ^d  

^a UNIVERSITÉ LYON 1   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS MATERIALS; HOLE MOBILITY; HYDROGENATION; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SILICON; STRAIN; THIN FILMS; X RAY SPECTROSCOPY;

DEFECT DENSITY; LIGHT DEGRADATION; NANOPARTICLES; VALENCE BANDS;

NANOSTRUCTURED MATERIALS;

EID: 14744274908     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/8/006     Document Type: Article

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