Photoinduced stress in hydrogenated amorphous silicon films

Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1734-1736

  Stratakis, E ^a,b   Spanakis, E ^a,b   Tzanetakis, P ^a,b   Fritzsche, H ^c   Guha, S ^d   Yang, J ^d  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c Energy Conversion Devices Inc   (United States)

^d United Solar Systems Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COORDINATION DEFECTS; CRYSTALLINE SILICONS; EXPOSURE-TIME; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED AMORPHOUS SILICON FILMS; INITIAL STRESS; PHOTO-INDUCED; PHOTO-INDUCED STRESS; SATURATION VALUES; STRETCHED EXPONENTIAL; VOLUME CHANGE; YOUNG'S MODULUS;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; HYDROGENATION; PLASMA DEPOSITION;

AMORPHOUS SILICON;

EID: 79955992879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1458068     Document Type: Article

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