Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates

Electronics Letters

Volumn 40, Issue 1, 2004, Pages 80-81

  Lee, J W ^a   Kumar, V ^a   Schwindt, R ^a   Kuliev, A ^a   Birkhahn, R ^b   Gotthold, D ^b   Guo, S ^b   Albert, B ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE; CURRENT DENSITY; ELECTRIC INSULATING MATERIALS; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; TRANSCONDUCTANCE;

DRAIN VOLTAGE; TRANSFER LENGTH METHOD (TLM);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0347760403     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040012     Document Type: Article

References (8)

1. Ando, Y., et al.: 'A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate', IEDM Tech. Dig., 2001, pp. 381-384
2. Schwindt, R.S., et al.: 'Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates', IEEE Microw. Wirel. Compon. Lett., 2003, 13, pp. 93-95
3. Lee, C., et al.: 'State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs', Electron. Lett., 2003, 38, p. 924
4. Morkoç, H., et al.: 'Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies', J. Appl. Phys., 1994, 76, p. 1363
5. Weimann, N.G., Manfra, M.J., and Wächtler, T.: 'Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates', IEEE Electron Device Lett., 2003, 24, pp. 57-59
6. Kumar, V., et al.: 'Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN', J. Appl. Phys., 2002, 92, pp. 1712-1714
7. Smorchkova, I.P., et al.: 'AlGaN/GaN HEMTs-operation in the K-band and above', IEEE Trans. Microw. Theory Tech., 2003, 51, pp. 665-668
8. Vellas, N., et al.: 'High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz', IEEE Electron Device Lett., 2002, 23, pp. 461-463