A quantum corrected energy-transport model for nanoscale semiconductor devices

Journal of Computational Physics

Volumn 204, Issue 1, 2005, Pages 131-156

  Chen, Ren Chuen ^a   Liu, Jinn Liang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MOSFET DEVICES; QUANTUM CHEMISTRY; QUANTUM THEORY;

DENSITY GRADIENTS; ENERGY-TRANSPORT; GRADIENT'S METHODS; HOT-ELECTRON TRANSPORT; MATHEMATICAL ASPECTS; NANOSCALE SEMICONDUCTOR DEVICES; PHYSICAL ASPECTS; QUANTUM MECHANICAL EFFECTS; QUANTUM-MECHANICAL CORRECTIONS; TRANSPORT MODELLING;

GRADIENT METHODS;

EID: 14544298353     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcp.2004.10.006     Document Type: Article

References (34)

1. H. Abebe, E. Cumberbatch, Quantum mechanical effects correction models for inversion charge and I-V characteristics of the MOSFET device, in: Proceedings of the 2003 Nanotechnology Conference, vol. 2, 2003, pp. 218-221
2. N.R. Aluru A. Raefsky P.M. Pinsky K.H. Law R.J.G. Goossens R.W. Dutton A finite element formulation for the hydrodynamic semiconductor device equations Comput. Methods Appl. Mech. Engrg. 107 1993 269
3. M.G. Ancona G.J. Iafrate Quantum correction to the equation of state of an electron gas in a semiconductor Phys. Rev. B 39 1989 9536
4. M.G. Ancona H.F. Tiersten Macroscopic physics of the silicon inversion layer Phys. Rev. B 35 1987 7959
5. M.G. Ancona Z. Yu R.W. Dutton P.J.V. Voorde M. Cao D. Vook Density-gradient analysis of MOS tunneling IEEE Trans. Electron. Dev. 47 2000 2310
6. Y. Apanovich E. Lyumkis B. Polsky A. Shur P. Blakey Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models IEEE Trans. CAD 13 1994 702
7. A. Asenov A.R. Brown J.R. Watling The use of quantum potentials for confinement in semiconductor devices Model. Simul. Microstruct. (MSM'2002) 2002 490
8. B.A. Biegel, M.G. Ancona, C.S. Rafferty, Z. Yu, Efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices, NAS Tech. Report NAS-04-008, 2004
9. B.A. Biegel J.D. Plummer Comparison of self-consistency iteration options for the Wigner function method of quantum device simulation Phys. Rev. B 54 1996 8070
10. D. Chang J.G. Fossum Simplified energy-balance model for pragmatic multi-dimensional device simulation Solid-State Electron. 41 1997 1795
11. R.-C. Chen J.-L. Liu An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices J. Comput. Phys. 189 2003 579
12. R.-C. Chen J.-L. Liu Monotone iterative methods for the adaptive finite element solution of semiconductor equations J. Comput. Appl. Math. 159 2003 341
13. C.-H. Choi Z. Yu R.W. Dutton Modelling of MOS scaling with emphasis on gate tunnelling and source/drain resistance Superlattices Microstruct. 27 2000 191
14. P. Degond A. Jüngel P. Pietra Numerical discretization of energy-transport models for semiconductors with non-parabolic band structure SIAM Sci. Comput. 22 2000 986
15. D.K. Ferry J.-R. Zhou Form of the quantum potential for use in hydrodynamic equations for semiconductor device modeling Phys. Rev. B 48 1993 7944
16. C.L. Gardner The quantum hydrodynamic model for semiconductor devices SIAM J. Appl. Math. 54 1994 409
17. C.L. Gardner J.W. Jerome D.J. Rose Numerical methods for the hydrodynamic device model: Subsonic flow IEEE Trans. CAD 8 1989 501
18. H.L. Grubin J.P. Kreskovsky Quantum moment balance equations and resonant tunnelling structures Solid-State Electron. 32 1989 1701
19. 2 interface of a MOSFET Solid-State Electron. 32 1989 839
20. T. Höhr A. Schenk A. Wettstein W. Fichtner On density-gradient modeling of tunneling through insulators IEICE Trans. Electron. E86-C 2003 379
21. S. Jallepalli J. Bude W.K. Shih M.R. Pinto C.M. Maziar A.F. Tasch Jr. Electron and hole quantization and their impact on deep submicron p- and n-MOSFET characteristics IEEE Trans. Electron Devices 44 1997 297
22. J.P. Kreskovsky H.L. Grubin VLSI Design 3 2 1995 179
23. R. Lake G. Klimeck R.C. Bowen D. Jovanovic J. Appl. Phys. 81 1997 7845
24. Y. Li J.-L. Liu S.M. Sze T.-S. Chao A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices Comput. Phys. Commun. 142 2001 285
25. J.-L. Liu On weak residual error estimation SIAM J. Sci. Comput. 17 1996 1249
26. J.-L. Liu I.-J. Lin M.-Z. Shih R.-C. Chen M.-C. Hsieh Object oriented programming of adaptive finite element and finite volume methods Appl. Numer. Math. 21 1996 439
27. C. Philippidis D. Bohm R.D. Kaye The Aharonov-Bohm effect and the quantum potential Il Nuovo Cimento 71B 1982 75
28. R. Pinnau A. Unterreiter The stationary current-voltage characteristics of the quantum drift-diffusion model SIAM J. Numer. Anal. 37 1999 211
29. C.S. Rafferty B. Biegel Z. Yu M.G. Ancona J. Bude R.W. Dutton Multi-dimensional quantum effect simulation using a density-gradient model and script-level programming techniques Proc. SISPAD 1998 137-140
30. R. Rios N.D. Arora C.-L. Huang N. Khalil J. Faricelli L. Gruber IEDM Technical Digest 1995 937
31. M. Rudan F. Odeh J. White Numerical solution of the hydrodynamic model for a one-dimensional device COMPEL 6 1987 151
32. L. Shifren R. Akis D.K. Ferry Correspondence between quantum and classical motion: Comparing Bohmian mechanics with a smoothed effective potential approach Phys. Lett. A 274 2000 75
33. M.J. van Dort P.H. Woerlee A.J. Walker A.H. Juffermans H. Lifka A simple model for quantization effects in heavily-doped silicon MOSFET's at inversion conditions IEEE Trans. Electron. Dev. 39 1992 932
34. Z. Yu R.W. Dutton R.A. Kiehl Circuit/device modeling at the quantum level IEEE Trans. Electron. Dev. 47 2000 1819