Numerical discretization of energy-transport models for semiconductors with nonparabolic band structure

SIAM Journal on Scientific Computing

Volumn 22, Issue 3, 2001, Pages 986-1007

  Degond, P ^a   Jungel A ^a   Pietra, P ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Exponential fitting; Mixed finite element method; Nonparabolic band structure; Semiconductors

Indexed keywords

COMPUTER SIMULATION; ELECTRON DENSITY MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; NUMERICAL METHODS; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; TEMPERATURE MEASUREMENT;

DRIFT DIFFUSION FORMULATION; ENERGY TRANSPORT MODELS; NONDEGENERATE STATISTICS; NONPARABOLIC BAND STRUCTURE; NUMERICAL DISCRETIZATION; SEMICONDUCTOR BOLTZMANN EQUATION;

COMPUTATIONAL METHODS;

EID: 0034964957     PISSN: 10648275     EISSN: None     Source Type: Journal    
DOI: 10.1137/S1064827599360972     Document Type: Article

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