The use of quantum potentials for confinement in semiconductor devices

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Volumn , Issue , 2002, Pages 490-493

  Asenov, A ^a   Brown, A R ^a   Watling, J R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Effective potential; Intrinsic fluctuations; MOSFETs; Numerical simulations; Quantum corrections

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; MONTE CARLO METHODS; NUMERICAL METHODS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

EFFECTIVE POTENTIAL; INTRINSIC FLUCTUATIONS; QUANTUM CORRECTIONS; QUANTUM POTENTIALS;

MOSFET DEVICES;

EID: 6344257099     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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