Quantum mechanical effects correction models for inversion charge and current-voltage (I-V) characteristics of the MOSFET device

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 2, Issue , 2003, Pages 218-221

  Abebe, H ^a   Cumberbatch, E ^b  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b CLAREMONT GRADUATE UNIVERSITY   (United States)

Author keywords

Device modeling; MOSFET; Quantum effects; SPICE

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; COMPUTER SIMULATION; COMPUTER SOFTWARE; CURRENT VOLTAGE CHARACTERISTICS; QUANTUM THEORY;

DENSITY GRADIENT (DG) MODELS; DEVICE MODELING; HOLE TRANSPORT EQUATIONS; QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 6344235146     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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