Improved field-emission characteristics of GaN by BN coating

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 544-547

  Kimura, Chiharu ^a   Yamamoto, Tomohide ^a   Sugino, Takashi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON COMPOUNDS; CARRIER CONCENTRATION; CATHODES; COATINGS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FERMI LEVEL; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; TEMPERATURE;

BORON NITRIDE; COLD CATHODES; ELECTRIC-FIELD STRENGTH; FOWLER-NORDHEIM PLOT; HALL MEASUREMENT; HOPPING CONDUCTION; SURFACE POTENTIAL BARRIER; TURN-ON VOLTAGE;

ELECTRON EMISSION;

EID: 0037207772     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1516185     Document Type: Article

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