Influence of thickness on field emission characteristics of nanometre boron nitride thin films

Chinese Physics Letters

Volumn 20, Issue 6, 2003, Pages 947-949

  Gu, Guang Rui ^a,b   Li, Ying Ai ^a   Tao, Yan Chun ^a   He, Zhi ^a   Li, Jun Jie ^a   Yin, Hong ^a   Li, Wei Qing ^a   Zhao, Yong Nian ^a  

^a JILIN UNIVERSITY   (China)

^b YANBIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION; III-V SEMICONDUCTORS; NITRIDES; PHYSICAL VAPOR DEPOSITION; THIN FILMS;

BORON NITRIDE FILMS; BORON NITRIDE THIN FILMS; FIELD-EMISSION CHARACTERISTICS; FOWLER-NORDHEIM PLOTS; HIGH EMISSION CURRENT DENSITY; NANOMETRES; PHYSICAL VAPOUR DEPOSITION; RF MAGNETIC SPUTTERING; THRESHOLD ELECTRIC FIELDS; ULTRAHIGH VACUUM SYSTEM;

BORON NITRIDE;

EID: 0038237065     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/6/349     Document Type: Article

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