Field emission characteristics of boron nitride films deposited on Si substrates with cubic boron nitride crystal grains

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 1051-1054

  Kimura, Chiharu ^a   Yamamoto, Tomohide ^a   Sugino, Takashi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; COLD CATHODE TUBES; DIAMOND FILMS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; FIELD EMISSION DISPLAYS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SILICON; SUBSTRATES;

NEGATIVE ELECTRON AFFINITY (NEA);

CUBIC BORON NITRIDE;

EID: 0035326357     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1361042     Document Type: Conference Paper

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