Local current distribution and electrical properties of a magnetic tunnel junction using conducting atomic force microscopy

IEEE Transactions on Magnetics

Volumn 41, Issue 2, 2005, Pages 887-891

  Canizo Cabrera, A ^a   Li, Simon C ^a   Shu, Min Fong ^a   Lee, Jia Mou ^a   Garcia Vazquez, Valentin ^b   Chen, C C ^c   Wu, J C ^c   Takahashi, M ^d   Wu, Te Ho ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^c NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Conductive atomic force microscopy (CAFM); Dielectric tunnel capacitance; Local electric transport; Magnetic tunnel junction; Magnetoresistance ratio; Ramping effect; RC model

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC RESISTANCE; MAGNETIC MATERIALS; MAGNETIC STORAGE; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

CONDUCTIVE ATOMIC FORCE MICROSCOPY (CAFM); DIELECTRIC TUNNEL CAPACITANCE; LOCAL ELECTRIC TRANSPORT; MAGNETIC TUNNEL JUNCTIONS; MAGNETORESISTANCE RATIO (MRR);

TUNNEL JUNCTIONS;

EID: 14544268532     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.842080     Document Type: Article

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