Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures

IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 1, 1999, Pages 2820-2825

  Boeve, Hans ^a   Bruynseraede, Christophe ^a   Das, Jo ^a   Dessein, Kristof ^a   Borghs, Gustaaf ^a   De Boeck, Jo ^a  

^a IMEC   (Belgium)

Author keywords

Magnetic random access memories; Spin valve, tunnel junction

Indexed keywords

MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE;

NON-VOLATILE MAGNETORESISTIVE MEMORY;

MAGNETIC STORAGE;

EID: 0033184254     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.800992     Document Type: Article

References (11)

1. J.M. Daughton, "Magnetoresistive memory technology". Thin Solid Films 216, 162 (1992)
2. J.L. Brown, and A.V Pohm, "1-Mb Memory Chip Using Giant Magnetoresistive Memory Cells" IEEE Trans. Comp., Pack. & Man. Techn. - Part A 17, 373 (1994).
3. S. Tehrani, E. Chen, M. Durlam, T. Zhu, and H. Goronkin, "High Density Nonvolatile Magnetoresistive RAM", Digest - IEDM 1996.
4. M. Johnson, B.R. Bennett, M.J. Yang, M.M. Miller, and B.V. Shanabrook, "Hybrid Ferromagnet-Semiconductor Nonvolatile Gate" IEEE Trans. Magn. 34 (4), 1054 (1998).
5. L.V. Melo, L.M. Rodrigues, and P.P. Freitas, "Novel Spin-Valve Memory Architecture" IEEE Trans. Magn. 33, 3295 (1997).
6. J.M. Daughton, "Magnetic tunneling applied to memory", J. Appl. Phys. 81, 3758 (1997).
7. H. Boeve, J. Das, C. Bruynseraede, J. De Boeck, and G. Borghs, "Integration of spin-valves and GaAs diodes in magnetoresistive random access memory cells", J. Appl. Phys. 85, 4779 (1999).
8. W.J. Gallagher, S.S.P. Parkin, Y. Lu, X.P. Bian, A. Marley, K.P. Roche, R.A. Altman, S.A. Rishton, C. Jahnes, T.M. Shaw, and G. Xiao, "Microstructured magnetic tunnel junctions'', J. Appl. Phys. 81, 3741 (1997).
9. Z.G. Wang, and Y. Nakamura, "Design, Simulation, and Realization of Solid State Memory Element Using the Weakly Coupled GMR Effect" IEEE Trans. Magn. 32, 520 (1996).
10. R.C. Sousa, P.P. Freitas, V. Chu and J.P. Conde, "Vertical integration of spin dependent tunnel junctions and amorphous Si diode for MRAM application". This conference - HA-03.
11. S.E. Russek, J.O. Oti, S. Kaka, E.Y. Chen, "High-Speed Characterization of Sub-Micrometer GMR Devices", J. Appl. Phys. 85, 4773 (1999).