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IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 1, 1999, Pages 2832-2834

Vertical integration of a spin dependent tunnel junction with an amorphous si diode for mram application

(1) Sousa, Ricardo C a

a INESC (Portugal)

Author keywords

Diode; Hydrogenated amorphous si; MRAM; Spin polarized tunnel junctions

Indexed keywords

AMORPHOUS SILICON; DIODES; MAGNETIC FIELDS; OPTIMIZATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE; TUNNEL JUNCTIONS;

HYDROGENATED AMORPHOUS SILICON; SPIN POLARIZED TUNNEL JUNCTIONS;

MAGNETIC STORAGE;

EID: 0033184146 PISSN: 00189464 EISSN: None Source Type: Journal
DOI: 10.1109/20.800995 Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.