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Journal of Applied Physics

Volumn 95, Issue 2, 2004, Pages 764-766

Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect

(2) Han, X F a Yu, Andrew C C b

a INSTITUTE OF PHYSICS (China)

b SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; COERCIVE FORCE; CURRENT DENSITY; DEFECTS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; GIANT MAGNETORESISTANCE; INTEGRATED CIRCUIT MANUFACTURE; MAGNETIC STORAGE; MAGNETRON SPUTTERING; OXIDATION; RANDOM ACCESS STORAGE; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

INTERFACE STRUCTURE; MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

TUNNEL JUNCTIONS;

EID: 0742268438 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1629780 Document Type: Article

Times cited : (9)

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