Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 2028-2032

  Kubota, H ^a   Ando, Y ^a   Miyazaki, T ^a   Reiss, G ^b   Bruckl H ^b   Schepper, W ^b   Wecker, J ^c   Gieres, G ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b BIELEFELD UNIVERSITY   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; MAGNETIC HYSTERESIS; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

MAGNETIC TUNNEL JUNCTIONS (MTJ);

TUNNEL JUNCTIONS;

EID: 0042510950     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588357     Document Type: Article

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