Characterization of GaAlN/GaN superlattice heterostructures

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 803-806

  Makkai, Zs ^a   Pecz B ^a   Di Forte Poisson, M A ^b   Huet, F ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALUMINUM NITRIDE; INVERSION DOMAINS; SURFACE PITS;

HETEROJUNCTIONS;

EID: 14344279503     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.803     Document Type: Article

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