Study of thin films polarity of Group III nitrides

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Dovidenko, K ^a   Oktyabrsky, S ^b   Narayan, J ^a   Razeghi, M ^c  

^a North Carolina State University   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

BUFFER LAYERS; GROWTH MASK; PENDEO-EPITAXY; THIN FILM STRUCTURES;

HETEROJUNCTIONS;

EID: 3442879938     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s109257830000332x     Document Type: Conference Paper

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