Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) of tantalum pentoxide

Advanced Materials for Optics and Electronics

Volumn 10, Issue 3-5, 2000, Pages 115-122

  Kelly, P V ^a   Mooney, M B ^a,d   Beechinor, J T ^a   O'Sullivan, B J ^a   Hurley, P K ^a   Crean, G M ^a   Zhang, J Y ^b   Boyd, I W ^b   Paillous, M ^c   Jimenez, C ^c   Senateur, J P ^c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^d SEAGATE TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ULTRAVIOLET ASSISTED INJECTION LIQUID SOURCES (UVILS);

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; LOW TEMPERATURE OPERATIONS; PERMITTIVITY; REFRACTIVE INDEX; ULTRAVIOLET RADIATION;

TANTALUM COMPOUNDS;

EID: 14344278709     PISSN: 10579257     EISSN: None     Source Type: Journal    
DOI: 10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#     Document Type: Article

References (26)

1. Ohta K, Yamada K, Shimizu R, Tarui Y. IEEE Trans. Electron. Devices 1982; 29: 368.
2. Kato T, Itoh T, Taguchi M, Nakamura T, Ishikawa H. Symposium on VLSI Technology, Digest of Technical Papers, IEEE: Piscataway, NJ, USA, 1983; 86.
3. Oehrlein GS. J. Appl. Phvs. 1986; 59: 1587.
4. Lu Q, Park D, Kalnitsky A, Chang C, Cheng CC, Tay SP, King TJ, Hu C. IEEE Elec. Device Lett. 1998; 19: 341.
5. An CH, Sugimoto K. J. Electrochem. Soc. 1992; 139: 1956.
6. Hitchens WR. J. Electrochem Soc. 1993; 140: 2615.
7. Devine RAB, Vallier L. Appl. Phys. Lett. 1996; 68: 1775.
8. Lan WH, Tu ST, Yang SJ, Huang KF. Jpn. J. Appl. Phys. 1990; 29: 997.
9. Zhang J-Y, Bie L-J, Boyd IW. Jpn. J. Appl. Phys. 1998; 37: L27-L29.
10. Boyd IW. Appl. Surf. Sci. 1997; 110: 538-543.
11. Bergonzo P, Boyd IW. Microel. Eng. 1994; 25: 345.
12. Bergonzo P, Boyd IW. Electron. Lett. 1994; 30: 606-608.
13. Bergonzo P, Kogelschatz U, Boyd IW. Appl. Surf. Sci. 1993; 69: 393.
14. Felten F, Senateur JP, Labeau M, Yu-Zhang K, Abrutis A. Thin Solid Films 1997; 296: 79-81.
15. French Patent CNRS LMGP PCT FR94/00858.
16. Zhang J-Y, Boyd IW, Mooney MB, Hurley PK, O'Sullivan BJ, Beechinor JT, Kelly PV, Crean GM, Paillous M, Jimenez C, Sénateur J-P. Mat. Res. Soc. Symp. Proc. 1999; 567: 397-402.
17. Beechinor JT, Mooney MB, Kelly PV, Crean GM, Zhang J-Y, Boyd IW, Paillous M, Jimenez C, Sénateur J-P. Mat. Res. Soc. Symp. Proc. 1999; 567: 509-514.
18. Mooney MB, Hurley PK, O'Sullivan BJ, Beechinor JT, Kelly PV, Crean GM, Zhang J-Y, Boyd IW, Sénateur J-P, Jimenez C, Paillous M. Microel. Eng. 1999; 48: 283-286.
19. Zhang J-Y, Boyd IW, Mooney MB, Hurley PK, Beechinor JT, O'Sullivan BJ, Kelly PV, Crean GM, Senateur JP, Jimenez C, Paillous M. Appl. Phys. A - Mat. Sci. Process. 2000; 70: 647-649.
20. Kizilyalli IC, Huang RYS, Roy PK. IEEE Electron Device Lett. 1998; 19: 423-425.
21. Jones AC, Leedham TJ, Wright PJ, Crosbie MJ, Williams DJ, Lane PA, O'Brien P. Mat. Res. Soc. Symp. Proc. 1998; 495: 11-21.
22. Weltner W. McLeod D. J. Chem. Phys. 1965; 42: 882.
23. Brnicevic N, Djordjevic C. J. Less-Common Metal. 1970; 21: 469-471.
24. Ghodsi FE, Tepehan FZ, Tepehan GG. Thin Solid Films 1997; 295: 11.
25. Kamiyama S, Lesaicherre P, Suzuki H, Sakai A, Nishiyama I, Ishitani A. J. Electrochem. Soc. 1993; 140: 1617.
26. Sun SC, Chen TF. Proc. IEDM, 1996; 687.