Formation of high quality tantalum oxide thin films at 400°C by 172 nm radiation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 1 PART A/B, 1998, Pages

  Zhang, Jun Ying ^a   Bie, Li Jian ^a   Boyd, Ian W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Excimer lamp; Low temperature annealing; Semiconductor devices; Sol gel process; Tantalum oxide; Thin film

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELLIPSOMETRY; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; TANTALUM; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE MEASUREMENT; CURRENT VOLTAGE MEASUREMENT; EXCIMER LAMP; LOW TEMPERATURE ANNEALING; PHOTOASSISTED SOL GEL PROCESS; TANTALUM OXIDE;

THIN FILMS;

EID: 0031654378     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l27     Document Type: Article

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